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AO7403 PDF预览

AO7403

更新时间: 2024-10-30 12:51:31
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管场效应晶体管
页数 文件大小 规格书
4页 116K
描述
P-Channel Enhancement Mode Field Effect Transistor

AO7403 数据手册

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AO7403  
P-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AO7403 uses advanced trench technology to provide  
excellent RDS(ON), low gate charge, and operation with gate  
voltages as low as 1.8V, in the small SOT323 footprint. It can  
be used for a wide variety of applications, including load  
switching, low current inverters and low current DC-DC  
converters. It is ESD protected to 2KV HBM. Standard Product  
AO7403 is Pb-free (meets ROHS & Sony 259 specifications).  
AO7403L is a Green Product ordering option. AO7403 and  
AO7403L are electrically identical.  
VDS (V) = -20V  
ID = -0.7A (VGS = -4.5V)  
RDS(ON) < 470m(VGS = -4.5V)  
RDS(ON) < 625m(VGS = -2.5V)  
RDS(ON) < 900m(VGS = -1.8V)  
D
S
SC-70  
(SOT-323)  
Top View  
G
D
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
VDS  
Maximum  
-20  
Units  
V
V
Drain-Source Voltage  
Gate-Source Voltage  
Continuous Drain  
Current A  
VGS  
±8  
TA=25°C  
TA=70°C  
-0.7  
ID  
-0.5  
A
Pulsed Drain Current B  
IDM  
-3  
TA=25°C  
TA=70°C  
0.35  
PD  
W
Power Dissipation A  
0.22  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
°C  
Thermal Characteristics  
Parameter  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
Symbol  
Typ  
300  
350  
280  
Max  
360  
425  
320  
Units  
°C/W  
°C/W  
°C/W  
t 10s  
Steady-State  
Steady-State  
RθJA  
RθJL  
Alpha & Omega Semiconductor, Ltd.  

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