Datasheet > AO7403L

AO7403L

更新时间： 2024-11-19 21:54:35

品牌	Logo	应用领域
其他 - ETC		晶体晶体管场效应晶体管
页数	文件大小	规格书
7页	520K
描述
P-Channel Enhancement Mode Field Effect Transistor

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AO7403L 数据手册

Rev 2: Aug 2004

AO7403, AO7403L ( Green Product )

P-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AO7403 uses advanced trench technology to

provide excellent R_DS(ON), low gate charge, and

operation with gate voltages as low as 1.8V, in the

small SOT323 footprint. It can be used for a wide

variety of applications, including load switching, low

current inverters and low current DC-DC converters.

It is ESD protected to 2KV HBM. AO7403L (Green

Poduct) is offered in a lead-free package.

V_DS(V) = -20V

I_D= -0.7A

R_DS(ON)< 470mΩ (V_GS= -4.5V)

R_DS(ON)< 625mΩ (V_GS= -2.5V)

R_DS(ON)< 900mΩ (V_GS= -1.8V)

SC-70

(SOT-323)

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

-20

Units

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain

Current ^A

V_GS

±8

T_A=25°C

T_A=70°C

-0.7

I_D

-0.5

Pulsed Drain Current ^B

I_DM

-3

T_A=25°C

T_A=70°C

0.35

P_D

Power Dissipation ^A

0.22

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

°C

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Symbol

Typ

300

350

280

Max

360

425

320

Units

°C/W

t ≤ 10s

Steady-State

R_θJA

R_θJL

Alpha & Omega Semiconductor, Ltd.

12 3 4 5 6 7

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