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AO6808 PDF预览

AO6808

更新时间: 2024-10-30 12:51:31
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管场效应晶体管
页数 文件大小 规格书
4页 141K
描述
Dual N-Channel Enhancement Mode Field Effect Transistor

AO6808 数据手册

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AO6808  
Dual N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AO6808/L uses advanced trench technology to  
provide excellent RDS(ON), low gate charge and operation  
with gate voltages as low as 2.5V. This device is suitable  
for use as a load switch. It is ESD protected.  
AO6808 and AO6808L are electrically identical.  
-RoHS Compliant  
VDS = 20V  
ID = 6A  
(VGS = 4.5V)  
R
R
R
R
DS(ON) = 19m(typical) (VGS = 4.5V)  
DS(ON) = 20m(typical) (VGS = 4.0V)  
DS(ON) = 21m(typical) (VGS = 3.1V)  
DS(ON) = 23m(typical) (VGS = 2.5V)  
-AO6808L is Halogen Free  
D2  
D1  
TSOP6  
Top View  
G1  
G2  
1
2
3
6
5
4
S1  
D1/D2  
S2  
G1  
D1/D2  
G2  
S2  
S1  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
VDS  
10 Sec  
Steady State  
Units  
Drain-Source Voltage  
20  
V
V
VGS  
Gate-Source Voltage  
Continuous Drain  
Current A  
±12  
TA=25°C  
TA=70°C  
6
4.6  
3.7  
ID  
4.6  
A
Pulsed Drain Current B  
IDM  
60  
TA=25°C  
TA=70°C  
1.3  
0.8  
0.8  
0.5  
Power Dissipation A  
PD  
W
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
°C  
Thermal Characteristics  
Parameter  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
Symbol  
Typ  
76  
Max  
95  
Units  
°C/W  
°C/W  
°C/W  
t 10s  
RθJA  
Steady State  
Steady State  
118  
54  
150  
68  
RθJL  
Alpha & Omega Semiconductor, Ltd.  
www.aosmd.com  

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