Datasheet > AO6806

AO6806

更新时间： 2024-10-30 12:51:31

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
4页	209K
描述
Dual N-Channel Enhancement Mode Field Effect Transistor

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AO6806 数据手册

AO6806

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AO6806 uses advanced trench technology to

provide excellent R_DS(ON), low gate charge and

operation with gate voltages as low as 2.5V. This device

is suitable for use as a load switch or in PWM

applications. AO6806 is Pb-free (meets ROHS & Sony

259 specifications).

V_DS= 20V

I_D= 5.0A

(V_GS= 4.5V)

_DS(ON)< 33mΩ (V_GS= 4.5V)

_DS(ON)< 34mΩ (V_GS= 4.0V)

_DS(ON)< 36mΩ (V_GS= 3.1V)

R_DS(ON)< 40mΩ (V_GS= 2.5V)

TSOP6

2.7KΩ

Top View

D1/D2

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

10 Sec

Steady State

Units

Drain-Source Voltage

V_GS

Gate-Source Voltage

Continuous Drain

Current ^A

±12

T_A=25°C

T_A=70°C

3.8

I_D

3.8

Pulsed Drain Current ^B

I_DM

T_A=25°C

T_A=70°C

1.3

0.8

0.5

Power Dissipation ^A

P_D

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

°C

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Symbol

Typ

Max

Units

°C/W

t ≤ 10s

R_θJA

Steady State

118

150

R_θJL

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4

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