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AO7405_11 PDF预览

AO7405_11

更新时间: 2024-10-30 12:51:31
品牌 Logo 应用领域
美国万代 - AOS /
页数 文件大小 规格书
5页 213K
描述
30V P-Channel MOSFET

AO7405_11 数据手册

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AO7405  
30V P-Channel MOSFET  
General Description  
Product Summary  
VDS  
The AO7405 uses advanced trench technology to  
provide excellent RDS(ON), low gate charge, and  
operation with gate voltages as low as 2.5V, in the  
small SOT363 footprint. It can be used for a wide  
variety of applications, including load switching, low  
current inverters and low current DC-DC converters.  
-30V  
ID (at VGS=-10V)  
RDS(ON) (at VGS=-10V)  
RDS(ON) (at VGS =-4.5V)  
RDS(ON) (at VGS =-2.5V)  
-1.4A  
< 115m  
< 140mΩ  
< 200mΩ  
SC70-6L  
(SOT363)  
D
Top View  
Bottom View  
Top View  
D
D
G
D
1
2
6
5
D
S
G
3
4
S
Pin1  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
VDS  
Maximum  
-30  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
VGS  
±12  
TA=25°C  
TA=70°C  
-1.4  
Continuous Drain  
Current  
ID  
A
-1.0  
Pulsed Drain Current C  
IDM  
PD  
-10  
TA=25°C  
TA=70°C  
0.35  
W
°C  
Power Dissipation B  
0.22  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 150  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
300  
340  
280  
Max  
360  
425  
320  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A D  
Maximum Junction-to-Lead  
t
10s  
RθJA  
Steady-State  
Steady-State  
RθJL  
Rev 3: April 2011  
www.aosmd.com  
Page 1 of 5  

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