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AO7402 PDF预览

AO7402

更新时间: 2024-11-20 08:31:03
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管
页数 文件大小 规格书
4页 108K
描述
N-Channel Enhancement Mode Field Effect Transistor

AO7402 数据手册

 浏览型号AO7402的Datasheet PDF文件第2页浏览型号AO7402的Datasheet PDF文件第3页浏览型号AO7402的Datasheet PDF文件第4页 
AO7402  
N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AO7402 uses advanced trench technology to provide  
excellent RDS(ON), low gate charge and operation with gate  
voltages as low as 1.8V, in the small SOT323 footprint. It can  
be used for a wide variety of applications, including load  
switching, low current inverters and low current DC-DC  
converters. Standard Product AO7402 is Pb-free (meets ROHS  
& Sony 259 specifications). AO7402L is a Green Product  
ordering option. AO7402 and AO7402L are electrically  
identical.  
VDS (V) = 20V  
ID = 1.6 A (VGS = 4.5V)  
RDS(ON) < 90m(VGS = 4.5V)  
RDS(ON) < 105m(VGS = 2.5V)  
RDS(ON) < 130m(VGS = 1.8V)  
SC-70  
(SOT-323)  
Top View  
D
G
D
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
VDS  
Drain-Source Voltage  
20  
V
VGS  
Gate-Source Voltage  
Continuous Drain  
Current A  
±8  
1.6  
V
A
TA=25°C  
TA=70°C  
ID  
1.2  
Pulsed Drain Current B  
IDM  
10  
TA=25°C  
TA=70°C  
0.35  
PD  
W
Power Dissipation A  
0.22  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
°C  
Thermal Characteristics  
Parameter  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
Symbol  
Typ  
300  
340  
280  
Max  
360  
425  
320  
Units  
°C/W  
°C/W  
°C/W  
t 10s  
RθJA  
Steady-State  
Steady-State  
RθJL  
Alpha Omega Semiconductor, Ltd.  

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