Datasheet > AO6802L

AO6802L

更新时间： 2024-10-30 08:31:03

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
4页	114K
描述
Dual N-Channel Enhancement Mode Field Effect Transistor

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AO6802L 数据手册

AO6802

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AO6802 uses advanced trench technology to

provide excellent R_DS(ON)and low gate charge. This

device is suitable for use as a load switch or in PWM

applications. Standard Product AO6802 is Pb-free

(meets ROHS & Sony 259 specifications). AO6802L

is a Green Product ordering option. AO6802 and

AO6802L are electrically identical.

V_DS(V) = 30V

I_D= 3.1 A (V_GS= 10V)

_DS(ON)< 75mΩ (V_GS= 10V)

_DS(ON)< 115mΩ (V_GS= 4.5V)

TSOP6

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

V_GS

Gate-Source Voltage

Continuous Drain

Current ^A

±20

3.1

T_A=25°C

T_A=70°C

I_D

2.4

Pulsed Drain Current ^B

I_DM

T_A=25°C

T_A=70°C

1.15

P_D

Power Dissipation ^A

0.73

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

°C

Thermal Characteristics each FET

Parameter

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Symbol

Typ

Max

110

150

Units

°C/W

t ≤ 10s

R_θJA

Steady-State

106

R_θJL

Alpha & Omega Semiconductor, Ltd.

12 3 4

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