Datasheet > AO7401_11

AO7401_11

更新时间： 2024-11-20 12:51:31

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
5页	207K
描述
30V P-Channel MOSFET

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AO7401_11 数据手册

AO7401

30V P-Channel MOSFET

General Description

Product Summary

V_DS

The AO7401 uses advanced trench technology to

provide excellent R_DS(ON), low gate charge, and

operation with gate voltages as low as 2.5V, in the

small SOT363 footprint. It can be used for a wide

variety of applications, including load switching, low

current inverters and low current DC-DC converters.

-30V

I_D(at V_GS=-10V)

R_DS(ON)(at V_GS=-10V)

R_DS(ON)(at V_GS=-4.5V)

R_DS(ON)(at V_GS=-2.5V)

-1.4A

< 115mΩ

< 140mΩ

< 200mΩ

SC-70

(SOT-323)

Top View

Bottom View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

-30

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

±12

T_A=25°C

T_A=70°C

-1.4

Continuous Drain

Current

I_D

-1.0

Pulsed Drain Current ^C

I_DM

P_D

-10

T_A=25°C

T_A=70°C

0.35

°C

Power Dissipation ^B

0.22

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

300

340

280

Max

360

425

320

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

≤ 10s

R_θJA

Steady-State

R_θJL

Rev 6: June 2011

www.aosmd.com

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