Datasheet > AO4435

AO4435

更新时间： 2024-10-15 18:09:27

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
5页	957K
描述
SOP-8

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中文翻译

获取价格

数据手册

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AO4435 数据手册

AO4435

LOW VOLTAGE MOSFET (P-CHANNEL)

FEATURES

 Ultra low on-resistance:V_DS=-30V,I_D=-1A, R_DS(ON)≤21mΩ@V_GS=-10V

 Ultra low gate charge

 For load switch or in PWM applications

 Surface Mount device

SOP-8

MECHANICAL DATA



Case: SOP-8

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.3 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Drain-source voltage

Gate-source voltage

Symbol

10Sec

Steady state

-30

±20

Unit

V_GS

T_A= 25°C

T_A= 70°C

-10

-8

-6

Continuous drain current

I_D

Pulsed drain current

I_DM

P_D

-29

1.92

1.15

150

T_A= 25°C

T_A= 70°C

Power dissipation

Thermal resistance from Junction to ambient

Thermal resistance from Junction to Lead

Junction temperature

R_θ

°C/W

°C

R_θ

T_J

T_STG

Storage temperature

-55 ~+150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol

Min

Typ

Max

Unit

Conditions

V(BR)DSS*

-30

μA

Drain-Source breakdown voltage

Zero gate voltage drain current

Gate-body leakage current

Gate-threshold voltage

V =0V, I =-250μA

-1

±100

I_DSS

I_GSS

V_DS=-30V,

VGS=0V

V_DS=0V,

V^GS=±20V

-1.0 -1.6 -2.5

-80

V_GS(th)

V =V , I =-250μA

On-State Drain Current

I_D(ON)

V_DS=-5V,

VGS=-10V

VGS=-10V, ID=-1A

mΩ

Drain-source on-resistance

R_DS(ON)*

VGS=-4.5V, ID=-1A

Forward transconductance

Diode forward voltage

Diode forward current

Input capacitance

Output capacitance

Reverse transfer capacitance

Gate resistance

Total gate charge

Gate-source charge

Gate-drain charge

Turn-on delay time

Turn-on rise time

Turn-off delay time

Turn-off fall time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

g_FS

V_SD

I_S

C_iss

C_oss

C_rss

R_g

V =-5V, I =-1A

-1.5

-3.5

IS=-1A, VGS=0V

1130 1400

240

155

V_{DS=-15V, VGS=0V, f=1MHz}

5.8

9.5

5.5

3.3

8.7

8.5

V_{DS=0V, V =0V, f=1MHz}

V =-4.5V,V =-15V,I =-1A

Q_g

VGS=-10V,VDS=-15V,ID=-1A

Q_gs

Q_gd

t_d(on)

t_r

t_d(off)

t_f

VGS=-10V, VDS=-15V,

RGEN=3Ω,RL=1.67Ω

t_rr

Q_rr

I =-10A, dI/dt=100A/μ s

*Pulse test ; Pulse width ≤300µs, Duty cycle ≤0.5% .

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E-mail:hkt@heketai.com

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与AO4435相关器件

型号	品牌	获取价格	描述	数据表
AO4435 (KO4435)	KEXIN	获取价格	P-Channel MOSFET
AO4435_11	AOS	获取价格	30V P-Channel MOSFET
AO4435A	UMW	获取价格	种类:P-Channel;漏源电压（Vdss）:-30V;持续漏极电流（Id）（在25°C
AO4437	AOS	获取价格	P-Channel Enhancement Mode Field Effect Transistor
AO4437	FREESCALE	获取价格	12V P-Channel MOSFET
AO4437 (KO4437)	KEXIN	获取价格	P-Channel MOSFET
AO4437_10	AOS	获取价格	12V P-Channel MOSFET
AO4437L	AOS	获取价格	P-Channel Enhancement Mode Field Effect Transistor
AO4438	AOS	获取价格	N-Channel Enhancement Mode Field Effect Transistor
AO4438	FREESCALE	获取价格	60V N-Channel MOSFET

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