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AO4441L PDF预览

AO4441L

更新时间: 2024-09-15 08:30:59
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管场效应晶体管
页数 文件大小 规格书
4页 154K
描述
P-Channel Enhancement Mode Field Effect Transistor

AO4441L 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:compliant风险等级:5.58
Base Number Matches:1

AO4441L 数据手册

 浏览型号AO4441L的Datasheet PDF文件第2页浏览型号AO4441L的Datasheet PDF文件第3页浏览型号AO4441L的Datasheet PDF文件第4页 
AO4441  
P-Channel Enhancement Mode Field Effect Transistor  
Features  
General Description  
VDS (V) = -60V  
The AO4441 uses advanced trench technology to  
provide excellent RDS(ON), and ultra-low low gate  
charge. This device is suitable for use as a load  
switch or in PWM applications. Standard Product  
AO4441 is Pb-free (meets ROHS & Sony 259  
specifications). AO4441L is a Green Product  
ordering option. AO4441 and AO4441L are  
electrically identical.  
ID = -4 A (VGS = -10V)  
R
DS(ON) < 100m(VGS = -10V)  
DS(ON) < 130m(VGS = -4.5V)  
R
D
S
SOIC-8  
Top View  
S
S
S
G
D
D
D
D
G
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
VDS  
Drain-Source Voltage  
-60  
V
VGS  
Gate-Source Voltage  
Continuous Drain  
Current A  
±20  
V
A
TA=25°C  
TA=70°C  
-4  
-3.1  
ID  
Pulsed Drain Current B  
IDM  
-20  
TA=25°C  
TA=70°C  
3.1  
PD  
W
Power Dissipation A  
2
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
°C  
Thermal Characteristics  
Parameter  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
Symbol  
Typ  
24  
Max  
40  
Units  
°C/W  
°C/W  
°C/W  
t 10s  
RθJA  
Steady-State  
Steady-State  
54  
75  
RθJL  
21  
30  
Alpha & Omega Semiconductor, Ltd.  

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