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AO4447L PDF预览

AO4447L

更新时间: 2024-10-30 04:06:19
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管场效应晶体管
页数 文件大小 规格书
7页 596K
描述
P-Channel Enhancement Mode Field Effect Transistor

AO4447L 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:compliant风险等级:5.61
Base Number Matches:1

AO4447L 数据手册

 浏览型号AO4447L的Datasheet PDF文件第2页浏览型号AO4447L的Datasheet PDF文件第3页浏览型号AO4447L的Datasheet PDF文件第4页浏览型号AO4447L的Datasheet PDF文件第5页浏览型号AO4447L的Datasheet PDF文件第6页浏览型号AO4447L的Datasheet PDF文件第7页 
AO4447  
P-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AO4447 uses advanced trench technology to  
provide excellent RDS(ON), and ultra-low low gate  
charge. This device is suitable for use as a load  
switch. The device is ESD protected. Standard  
Product AO4447 is Pb-free (meets ROHS & Sony  
259 specifications). AO4447L is a Green Product  
ordering option. AO4447 and AO4447L are  
electrically identical.  
VDS (V) = -30V  
ID = -15 A (VGS = -10V)  
Max RDS(ON) < 7.5mΩ (VGS = -10V)  
Max RDS(ON) < 12mΩ (VGS = -4V)  
ESD Rating: 4KV HBM  
D
SOIC-8  
Top View  
S
S
S
G
D
D
D
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
VDS  
Drain-Source Voltage  
-30  
V
VGS  
Gate-Source Voltage  
Continuous Drain  
Current A  
±20  
-15  
V
A
TA=25°C  
TA=70°C  
ID  
-13.6  
-60  
Pulsed Drain Current B  
IDM  
TA=25°C  
TA=70°C  
3.1  
PD  
W
Power Dissipation A  
2
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
°C  
Thermal Characteristics  
Parameter  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
Symbol  
Typ  
26  
Max  
40  
Units  
°C/W  
°C/W  
°C/W  
t 10s  
RθJA  
Steady-State  
Steady-State  
50  
75  
RθJL  
14  
24  
Alpha & Omega Semiconductor, Ltd.  

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