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AO4450 PDF预览

AO4450

更新时间: 2024-10-30 08:30:59
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管
页数 文件大小 规格书
4页 111K
描述
N-Channel Enhancement Mode Field Effect Transistor

AO4450 技术参数

生命周期:End Of Life包装说明:,
Reach Compliance Code:compliant风险等级:5.03
Base Number Matches:1

AO4450 数据手册

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AO4450  
N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AO4450 uses advanced trench technology to  
provide excellent RDS(ON) and low gate charge. This  
device is suitable for use as a load switch or in PWM  
applications. Standard Product AO4450 is Pb-free  
(meets ROHS & Sony 259 specifications). AO4450L  
is a Green Product ordering option. AO4450 and  
AO4450L are electrically identical.  
VDS (V) = 40V  
ID = 6.6A (VGS = 10V)  
R
DS(ON) <30m(VGS = 10V)  
DS(ON) < 43m(VGS = 4.5V)  
R
D
S
S
S
S
G
D
D
D
D
G
SOIC-8  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
VDS  
Drain-Source Voltage  
40  
V
VGS  
Gate-Source Voltage  
Continuous Drain  
Current A  
±20  
6.6  
V
A
TA=25°C  
TA=70°C  
ID  
5.2  
Pulsed Drain Current B  
IDM  
20  
TA=25°C  
TA=70°C  
2.5  
PD  
W
Power Dissipation  
1.6  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
°C  
Thermal Characteristics  
Parameter  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
Symbol  
Typ  
38  
Max  
50  
Units  
°C/W  
°C/W  
°C/W  
t 10s  
RθJA  
Steady-State  
Steady-State  
69  
80  
RθJL  
24  
30  

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