Datasheet > AO4459

AO4459

更新时间： 2024-10-30 12:51:27

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
6页	418K
描述
30V P-Channel MOSFET

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AO4459 数据手册

AO4459

30V P-Channel MOSFET

General Description

technology with a low resistance package to provide

The AO4459 combines advanced trench MOSFET

extremely low R

and battery protection applications.

_DS(ON). This device is ideal for load switch

Features

V_DS

-30V

I_D(at V_GS=-10V)

-6.5A

_DS(ON)(at V_GS=-10V)

< 46mΩ

< 72mΩ

R_DS(ON)(at V_GS= -4.5V)

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

-30

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

T_A=25°C

T_A=70°C

-6.5

Continuous Drain

Current

I_D

-5.3

Pulsed Drain Current ^C

I_DM

-30

Avalanche Current ^C

I_AS, I_AR

E_AS, E_AR

Avalanche energy L=0.1mH ^C

T_A=25°C

Power Dissipation ^B

3.1

P_D

°C

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

≤ 10s

R_θJA

Steady-State

R_θJL

1/6

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