Datasheet > AO4468_10

AO4468_10

更新时间： 2024-10-30 12:51:31

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
5页	255K
描述
30V N-Channel MOSFET

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AO4468_10 数据手册

AO4468

30V N-Channel MOSFET

General Description

Product Summary

V_DS

30V

The AO4468 combines advanced trench MOSFET

technology with a low resistance package to provide

extremely low R_DS(ON). This device is ideal for load switch

and battery protection applications.

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS= 4.5V)

10.5A

< 17mΩ

< 23mΩ

ESD Protected

100% UIS Tested

100% R_gTested

SOIC-8

Top View

Bottom View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

T_A=25°C

T_A=70°C

10.5

Continuous Drain

Current

I_D

8.5

Pulsed Drain Current ^C

I_DM

Avalanche Current ^C

I_AS, I_AR

E_AS, E_AR

Avalanche energy L=0.1mH ^C

T_A=25°C

Power Dissipation ^B

3.1

P_D

°C

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

≤ 10s

R_θJA

Steady-State

R_θJL

Rev 6: December 2010

www.aosmd.com

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