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AO4466 PDF预览

AO4466

更新时间: 2024-10-30 12:51:27
品牌 Logo 应用领域
飞思卡尔 - FREESCALE 晶体晶体管开关脉冲光电二极管PC
页数 文件大小 规格书
6页 385K
描述
30V N-Channel MOSFET

AO4466 数据手册

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AO4466  
30V N-Channel MOSFET  
General Description  
The AO4466 uses advanced trench technology to  
The AO4466 uses advanced trench technology to  
provide excellent R  
DS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM  
applications. The source leads are separated to allow  
used to bypass the source inductance.  
a Kelvin connection to the source, which may be  
Features  
VDS (V) = 30V  
ID = 10A  
(VGS = 10V)  
(VGS = 10V)  
(VGS = 4.5V)  
RDS(ON) < 23mΩ  
RDS(ON) < 35mΩ  
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
Drain-Source Voltage  
VDS  
30  
V
Gate-Source Voltage  
VGS  
±20  
V
A
TA=25°C  
TA=70°C  
10  
Continuous Drain  
Current AF  
ID  
7
Pulsed Drain Current B  
IDM  
64  
TA=25°C  
TA=70°C  
3.1  
PD  
W
Power Dissipation  
Avalanche Current B, G  
2
A
mJ  
°C  
IAR  
12  
7
Repetitive avalanche energy 0.1mH B, G  
EAR  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 150  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
34  
Max  
40  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
t 10s  
RθJA  
Steady-State  
Steady-State  
62  
75  
Maximum Junction-to-Lead C  
RθJL  
18  
24  
1/6  
www.freescale.net.cn  

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