Datasheet > AO4476AL

AO4476AL

更新时间： 2024-09-13 19:32:19

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	369K
描述
Transistor

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技术参数
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AO4476AL 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.56
Base Number Matches：	1

AO4476AL 数据手册

AO4476A

30V N-Channel MOSFET

General Description

Product Summary

V_DS

30V

The AO4476A combines advanced trench MOSFET

technology with a low resistance package to provide

extremely low R_DS(ON). This device is suitable for use as a

high side switch in SMPS and general purpose

applications.

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS= 4.5V)

15A

< 7.7mΩ

< 10.8mΩ

100% UIS Tested

100% R_gTested

SOIC-8

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

±20

V_GS

T_A=25°C

T_A=70°C

Continuous Drain

Current

I_D

Pulsed Drain Current ^C

I_DM

110

Avalanche Current ^C

I_AS, I_AR

E_AS, E_AR

Avalanche energy L=0.1mH ^C

T_A=25°C

Power Dissipation ^B

3.1

P_D

°C

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

≤ 10s

R_θJA

Steady-State

R_θJL

Rev1: September 2010

www.aosmd.com

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