Datasheet > AO4478_10

AO4478_10

更新时间： 2024-10-30 12:51:31

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	197K
描述
30V N-Channel MOSFET

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AO4478_10 数据手册

AO4478

30V N-Channel MOSFET

General Description

Product Summary

The AO4478 uses advanced trench technology to

provide excellent R_DS(ON), low gate charge. This

device is suitable for use as general puspose, PWM and

a load switch applications.

V_DS(V) = 30V

I_D= 9A (V_GS= 10V)

R_DS(ON)<19mΩ (V_GS= 10V)

R_DS(ON)<26mΩ (V_GS= 4.5V)

100% UIS Tested

100% Rg Tested

SOIC-8

ꢀ

Top View

Bottom View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

Gate-Source Voltage

V_GS

±25

9.0

7.0

T_A=25°C

T_A=70°C

Continuous Drain

Current

Pulsed Drain Current ^C

Avalanche Current ^C

Repetitive avalanche energy L=0.1mH^C

I_D

I_DM

Iar

Ear

T_A=25°C

3.1

P_D

Power Dissipation^B

T_A=70°C

2.0

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^AD

Maximum Junction-to-Lead ^C

Steady-State

R_θJL

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4 5 6

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