Datasheet > AO4466_12

AO4466_12

更新时间： 2024-10-30 12:51:31

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	411K
描述
30V N-Channel MOSFET

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AO4466_12 数据手册

AO4466

30V N-Channel MOSFET

General Description

Product Summary

The AO4466 uses advanced trench technology to

provide excellent R_DS(ON)and low gate charge. This

device is suitable for use as a load switch or in PWM

applications. The source leads are separated to allow

a Kelvin connection to the source, which may be

used to bypass the source inductance.

V_DS(V) = 30V

I_D= 10A

R_DS(ON)< 23mΩ

R_DS(ON)< 35mΩ

(V_GS= 10V)

(V_GS= 4.5V)

100% UIS Tested

100% Rg Tested

SOIC-8

Top View

Bottom View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

Gate-Source Voltage

V_GS

±20

T_A=25°C

T_A=70°C

Continuous Drain

Current ^AF

I_D

Pulsed Drain Current ^B

I_DM

T_A=25°C

T_A=70°C

3.1

P_D

Power Dissipation

Avalanche Current ^{B, G}

°C

I_AR

Repetitive avalanche energy 0.1mH ^{B, G}

E_AR

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Steady-State

Maximum Junction-to-Lead ^C

R_θJL

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4 5 6

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