AO4449L

更新时间： 2024-10-30 13:05:35

品牌	Logo	应用领域
美国万代 - AOS		晶体小信号场效应晶体管开关光电二极管
页数	文件大小	规格书
4页	110K
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AO4449L 数据手册

AO4449

P-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AO4449 uses advanced trench technology to

provide excellent R_DS(ON), and ultra-low low gate

charge. This device is suitable for use as a load

switch or in PWM applications. Standard Product

AO4449 is Pb-free (meets ROHS & Sony 259

specifications).

V_DS(V) = -30V

I_D= -7 A (V_GS= -10V)

_DS(ON)< 34mΩ (V_GS= -10V)

_DS(ON)< 54mΩ (V_GS= -4.5V)

SOIC-8

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

-30

V_GS

Gate-Source Voltage

Continuous Drain

Current ^F

±20

T_A=25°C

T_A=70°C

-7

-4.6

I_D

Pulsed Drain Current ^B

I_DM

-40

T_A=25°C

T_A=70°C

3.1

P_D

Power Dissipation ^A

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

°C

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Symbol

Typ

Max

Units

°C/W

t ≤ 10s

R_θJA

Steady-State

R_θJL

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4

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