Datasheet > AO4448

AO4448

更新时间： 2024-10-30 12:24:23

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	291K
描述
80V N-Channel MOSFET

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AO4448 数据手册

AO4448

80V N-Channel MOSFET

SDMOS ^TM

General Description

Product Summary

The AO4448 is fabricated with SDMOS^TMtrench

technology that combines excellent R_DS(ON)with low gate

charge and low Qrr.The result is outstanding efficiency

with controlled switching behavior. This universal

technology is well suited for PWM, load switching and

general purpose applications.

V_DS

80V

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS= 7V)

10A

< 16mΩ

< 20mΩ

100% UIS Tested

100% R_gTested

SOIC-8

Top View

Bottom View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

±25

V_GS

T_A=25°C

T_A=70°C

Continuous Drain

Current

I_D

Pulsed Drain Current ^C

I_DM

Avalanche Current ^C

I_AS, I_AR

E_AS, E_AR

101

Avalanche energy L=0.1mH ^C

T_A=25°C

Power Dissipation ^B

3.1

P_D

°C

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

≤ 10s

R_θJA

Steady-State

R_θJL

Rev 1: Nov 2010

www.aosmd.com

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