AO4446

更新时间： 2024-09-13 08:30:59

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管
页数	文件大小	规格书
4页	110K
描述
N-Channel Enhancement Mode Field Effect Transistor

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技术参数
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AO4446 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.78
Base Number Matches：	1

AO4446 数据手册

AO4446

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AO4446 uses advanced trench technology to

provide excellent R_DS(ON), low gate charge and low

gate resistance. This device is ideally suited for use

in PWM applications. Standard Product AO4446 is

Pb-free (meets ROHS & Sony 259 specifications).

AO4446L is a Green Product ordering option.

AO4446 and AO4446L are electrically identical.

V_DS(V) = 30V

I_D= 15A (V_GS= 10V)

_DS(ON)< 8.5mΩ (V_GS= 10V)

_DS(ON)< 14.5mΩ (V_GS= 4.5V)

SOIC-8

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

V_GS

Gate-Source Voltage

Continuous Drain

Current ^A

Pulsed Drain Current ^B

Avalanche Current ^B

±20

T_A=25°C

T_A=70°C

I_D

I_DM

I_AR

E_AR

Repetitive avalanche energy L=0.1mH ^B

T_A=25°C

P_D

Power Dissipation

T_A=70°C

2.1

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

°C

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Case ^C

Symbol

Typ

Max

Units

°C/W

t ≤ 10s

R_θJA

Steady-State

R_θJC

Alpha & Omega Semiconductor, Ltd.

12 3 4

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与AO4446相关器件

型号	品牌	获取价格	描述	数据表
AO4446 (KO4446)	KEXIN	获取价格	N-Channel MOSFET
AO4446_10	AOS	获取价格	30V N-Channel MOSFET
AO4446L	AOS	获取价格	N-Channel Enhancement Mode Field Effect Transistor
AO4447	AOS	获取价格	P-Channel Enhancement Mode Field Effect Transistor
AO4447 (KO4447)	KEXIN	获取价格	P-Channel MOSFET
AO4447_10	AOS	获取价格	30V P-Channel MOSFET
AO4447A	AOS	获取价格	30V P-Channel MOSFET
AO4447A	FREESCALE	获取价格	30V P-Channel MOSFET
AO4447A	UMW	获取价格	种类:P-Channel;漏源电压（Vdss）:-30V;持续漏极电流（Id）（在25°C
AO4447A	KEXIN	获取价格	P-Channel MOSFET