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AO4443 PDF预览

AO4443

更新时间: 2024-10-30 04:06:19
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管场效应晶体管
页数 文件大小 规格书
4页 113K
描述
P-Channel Enhancement Mode Field Effect Transistor

AO4443 数据手册

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AO4443  
P-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AO4443 uses advanced trench technology to  
provide excellent RDS(ON), and ultra-low low gate  
charge. This device is suitable for use as a load  
switch or in PWM applications. Standard Product  
AO4443 is Pb-free (meets ROHS & Sony 259  
specifications). AO4443L is a Green Product  
ordering option. AO4443 and AO4443L are  
electrically identical.  
VDS (V) = -40V  
ID = -6.5 A (VGS = -10V)  
R
DS(ON) < 42m(VGS = -10V)  
DS(ON) < 63m(VGS = -4.5V)  
R
D
S
SOIC-8  
Top View  
S
S
S
G
D
D
D
D
G
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
VDS  
Drain-Source Voltage  
-40  
V
VGS  
Gate-Source Voltage  
Continuous Drain  
Current A  
±20  
V
A
TA=25°C  
TA=70°C  
-6.5  
ID  
-5  
-20  
Pulsed Drain Current B  
IDM  
TA=25°C  
TA=70°C  
3.1  
PD  
W
Power Dissipation A  
2
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
°C  
Thermal Characteristics  
Parameter  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
Symbol  
Typ  
24  
Max  
40  
Units  
°C/W  
°C/W  
°C/W  
t 10s  
RθJA  
Steady-State  
Steady-State  
54  
75  
RθJL  
21  
30  
Alpha & Omega Semiconductor, Ltd.  

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