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AO4442

更新时间: 2024-11-18 08:30:59
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管
页数 文件大小 规格书
4页 224K
描述
N-Channel Enhancement Mode Field Effect Transistor

AO4442 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:compliant风险等级:5.81
Base Number Matches:1

AO4442 数据手册

 浏览型号AO4442的Datasheet PDF文件第2页浏览型号AO4442的Datasheet PDF文件第3页浏览型号AO4442的Datasheet PDF文件第4页 
AO4442  
N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AO4442 uses advanced trench technology to  
provide excellent RDS(ON), low gate charge and  
operation with gate voltages from 4.5V to 25V. This  
device is suitable for use as a load switch or in PWM  
applications. Standard Product AO4442 is Pb-free  
(meets ROHS & Sony 259 specifications). AO4442L  
is a Green Product ordering option. AO4442 and  
AO4442L are electrically identical.  
VDS (V) = 75V  
ID = 3.1A (VGS = 10V)  
R
DS(ON) < 130m(VGS = 10V)  
DS(ON) < 165m(VGS = 4.5V)  
R
D
S
S
S
G
D
D
D
D
G
SOIC-8  
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
VDS  
Drain-Source Voltage  
75  
V
VGS  
Gate-Source Voltage  
Continuous Drain  
Current A  
±25  
3.1  
V
A
TA=25°C  
TA=70°C  
ID  
2.5  
Pulsed Drain Current B  
IDM  
20  
TA=25°C  
TA=70°C  
2.5  
PD  
W
Power Dissipation  
1.6  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
°C  
Thermal Characteristics  
Parameter  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
Symbol  
Typ  
38  
Max  
50  
Units  
°C/W  
°C/W  
°C/W  
t 10s  
RθJA  
Steady-State  
Steady-State  
69  
80  
RθJL  
24  
30  
Alpha & Omega Semiconductor, Ltd.  

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