Datasheet > AO4443

AO4443

更新时间： 2024-11-18 12:51:27

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
5页	277K
描述
40V P-Channel MOSFET

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AO4443 数据手册

AO4443

40V P-Channel MOSFET

General Description

The AO4443 combines advanced trench MOSFET

technology with a low resistance package to provide

extremely low R_DS(ON)

. This device is ideal for load switch and battery protection applications.

Features

V_DS

-40V

I_D(at V_GS=-10V)

-6A

_DS(ON)(at V_GS=-10V)

< 42mΩ

< 63mΩ

R_DS(ON)(at V_GS=-4.5V)

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

-40

Gate-Source Voltage

V_GS

±20

T_A=25°C

T_A=70°C

-6

Continuous Drain

Current

I_D

-5

Pulsed Drain Current ^C

I_DM

-40

Avalanche Current ^C

I_AS, I_AR

E_AS, E_AR

Avalanche energy L=0.1mH ^C

T_A=25°C

Power Dissipation ^B

3.1

P_D

°C

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

≤ 10s

R_θJA

Steady-State

R_θJL

1/5

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