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AO4437L PDF预览

AO4437L

更新时间: 2024-11-18 08:30:59
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管场效应晶体管
页数 文件大小 规格书
3页 98K
描述
P-Channel Enhancement Mode Field Effect Transistor

AO4437L 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:compliant风险等级:5.8
Is Samacsys:NBase Number Matches:1

AO4437L 数据手册

 浏览型号AO4437L的Datasheet PDF文件第2页浏览型号AO4437L的Datasheet PDF文件第3页 
AO4437  
P-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AO4437 uses advanced trench technology to provide  
excellent RDS(ON), low gate charge and operation with gate  
voltages as low as 1.8V. This device is suitable for use as a  
load switch or in PWM applications. It is ESD protected.  
Standard Product AO4437 is Pb-free (meets ROHS & Sony  
259 specifications). AO4437L is a Green Product ordering  
option. AO4437 and AO4437L are electrically identical.  
VDS (V) = -12V  
ID = -11 A (VGS = -4.5V)  
RDS(ON) < 16m(VGS = -4.5V)  
RDS(ON) < 20m(VGS = -2.5V)  
RDS(ON) < 25m(VGS = -1.8V)  
ESD Rating: 4KV HBM  
SOIC-8  
Top View  
D
S
S
S
G
D
D
D
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
VDS  
Drain-Source Voltage  
-12  
V
VGS  
Gate-Source Voltage  
Continuous Drain  
Current A  
±8  
V
A
TA=25°C  
TA=70°C  
-11  
ID  
-9  
-20  
Pulsed Drain Current B  
IDM  
TA=25°C  
TA=70°C  
3
PD  
W
Power Dissipation A  
2.1  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
°C  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
31  
Max  
40  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
t 10s  
RθJA  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
63  
75  
Steady-State  
Steady-State  
RθJL  
21  
30  
Alpha & Omega Semiconductor, Ltd.  

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