Datasheet > AO4435A

AO4435A

更新时间： 2024-11-19 17:15:31

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
5页	577K
描述
种类:P-Channel;漏源电压（Vdss）:-30V;持续漏极电流（Id）（在25°C时）:-12A;Vgs(th)(V):±20;漏源导通电阻:20mΩ@-10V

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AO4435A 数据手册

UMW

AO4435A

- 30V P-Channel Enhancement Mode MOSFET

Description

AO4435A

The

uses advanced trench technology

to provide excellent R_DS(ON), low gate charge and

operation with gate voltages as low as 2.5V. This

device is suitable for use as a

Battery protection or in other Switching application.

General Features

V_DS= 30V I_D= 12A

R_DS(ON)< 20mΩ @ V_GS=10V

Application

Battery protection

Load switch

Uninterruptible power supply

Absolute Maximum Ratings (Tc=25℃ unless otherwise noted )

Symbol Parameter

Rating

- 30

Units

V_DS

Drain-Source Voltage

Gate-Source Voltage

VGS

+ 20

-12

Drain Current³, V_GS@ 10V

I_D@T_A=25℃

Drain Current³, V_GS@ 10V

-10

I_D@T_A=70℃

IDM

Pulsed Drain Current¹

Total Power Dissipation

-50

2.5

P_D@T_A=25℃

Linear Derating Factor

0.02

W/℃

Storage Temperature Range

-55 to 150

℃

TSTG

T_J

Operating Junction Temperature Range

Maximum Thermal Resistance, Junction-ambient³

Rthj-a

℃/W

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5

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