Datasheet > AO4441

AO4441

更新时间： 2024-11-19 17:15:15

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
7页	457K
描述
种类:P-Channel;漏源电压（Vdss）:-60V;持续漏极电流（Id）（在25°C时）:-4A;Vgs(th)(V):±20;漏源导通电阻:100mΩ@-10V

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AO4441 数据手册

UMW

AO4441

-60V P-Channel MOSFET

General Description

The AO4441 uses advanced trench technology to provide

excellent R_DS(ON), and ultra-low low gate charge. This

device is suitable for use as a load switch or in PWM

applications.

Features

VDS (V) =-60V

I_D= -4A

RDS(ON)

(V_GS=-10V)

(VGS = 10V)

100m

130m

(VGS = 4.5V)

SOP-8

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

-60

±20

Gate-Source Voltage

V_GS

T_A=25°C

T_A=70°C

-4

Continuous Drain

Current ^A

Pulsed Drain Current ^B

I_D

-3.1

-20

I_DM

P_D

T_A=25°C

T_A=70°C

3.1

°C

Power Dissipation ^A

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

≤ 10s

R_θJA

Steady-State

R_θJL

www.umw-ic.com

UTD Semiconductor Co.,Limited

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AO4443	UMW	获取价格	种类:P-Channel;漏源电压（Vdss）:-40V;持续漏极电流（Id）（在25°C