Datasheet > AO4437

AO4437

更新时间： 2024-09-15 12:24:23

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管开关光电二极管
页数	文件大小	规格书
4页	382K
描述
12V P-Channel MOSFET

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AO4437 数据手册

AO4437

12V P-Channel MOSFET

General Description

excellent R_DS(ON), low gate charge and operation with gate

load switch or in PWM applications. It is ESD protected.

The AO4437 uses advanced trench technology to provide

voltages as low as 1.8V. This device is suitable for use as a

Features

V_DS(V) = -12V

I_D= -11 A (V_GS= -4.5V)

R_DS(ON)< 16mΩ (V_GS= -4.5V)

R_DS(ON)< 20mΩ (V_GS= -2.5V)

R_DS(ON)< 25mΩ (V_GS= -1.8V)

ESD Rating: 4KV HBM

100% UIS Tested

100% Rg Tested

SOIC-8

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

-12

Gate-Source Voltage

V_GS

±8

T_A=25°C

T_A=70°C

-11

Continuous Drain

Current ^A

Pulsed Drain Current ^B

I_D

-9

-20

I_DM

T_A=25°C

T_A=70°C

P_D

°C

Power Dissipation ^A

2.1

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Steady-State

R_θJL

1/4

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与AO4437相关器件

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