Datasheet > AO4437_10

AO4437_10

更新时间： 2024-09-15 12:24:23

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
4页	170K
描述
12V P-Channel MOSFET

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AO4437_10 数据手册

AO4437

12V P-Channel MOSFET

General Description

Product Summary

The AO4437 uses advanced trench technology to provide

excellent R_DS(ON), low gate charge and operation with gate

voltages as low as 1.8V. This device is suitable for use as a

load switch or in PWM applications. It is ESD protected.

V_DS(V) = -12V

I_D= -11 A (V_GS= -4.5V)

R_DS(ON)< 16mΩ (V_GS= -4.5V)

R_DS(ON)< 20mΩ (V_GS= -2.5V)

R_DS(ON)< 25mΩ (V_GS= -1.8V)

ESD Rating: 4KV HBM

100% UIS Tested

100% Rg Tested

SOIC-8

Top View

Bottom View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

-12

Gate-Source Voltage

V_GS

±8

T_A=25°C

T_A=70°C

-11

Continuous Drain

Current ^A

Pulsed Drain Current ^B

I_D

-9

-20

I_DM

T_A=25°C

T_A=70°C

P_D

°C

Power Dissipation ^A

2.1

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Steady-State

R_θJL

Alpha & Omega Semiconductor, Ltd.

12 3 4

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