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AO4438 PDF预览

AO4438

更新时间: 2024-09-15 08:30:59
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管
页数 文件大小 规格书
4页 116K
描述
N-Channel Enhancement Mode Field Effect Transistor

AO4438 数据手册

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AO4438  
N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AO4438 uses advanced trench technology to  
provide excellent RDS(ON) and low gate charge. This  
device is suitable for use as a load switch or in PWM  
applications. Standard Product AO4438 is Pb-free  
(meets ROHS & Sony 259 specifications). AO4438L  
is a Green Product ordering option. AO4438 and  
AO4438L are electrically identical.  
VDS (V) = 60V  
ID = 8.2A (VGS = 10V)  
R
DS(ON) < 22m(VGS = 10V)  
DS(ON) < 27m(VGS = 4.5V)  
R
D
S
S
S
S
G
D
D
D
D
G
SOIC-8  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
VDS  
Drain-Source Voltage  
60  
V
VGS  
Gate-Source Voltage  
Continuous Drain  
Current A  
±20  
V
A
TA=25°C  
TA=70°C  
8.2  
ID  
6.6  
Pulsed Drain Current B  
IDM  
40  
3.1  
TA=25°C  
TA=70°C  
PD  
W
Power Dissipation  
2
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
°C  
Thermal Characteristics  
Parameter  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
Symbol  
Typ  
24  
Max  
40  
Units  
°C/W  
°C/W  
°C/W  
t 10s  
RθJA  
Steady-State  
Steady-State  
54  
75  
RθJL  
21  
30  
Alpha & Omega Semiconductor, Ltd.  

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