Datasheet > AFT21S230SR3

AFT21S230SR3

更新时间： 2024-10-26 12:50:51

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管
页数	文件大小	规格书
15页	559K
描述
RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs

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AFT21S230SR3 数据手册

Document Number: AFT21S230S_232S

Rev. 0, 10/2012

Freescale Semiconductor

Technical Data

RF Power LDMOS Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

AFT21S230SR3

AFT21S232SR3

These 50 watt RF power LDMOS transistors are designed for cellular base

station applications covering the frequency range of 2110 to 2170 MHz.

•

Typical Single--Carrier W--CDMA Performance: V_DD= 28 Volts,

_DQ= 1500 mA, P_out= 50 Watts Avg., Input Signal PAR = 9.9 dB @ 0.01%

Probability on CCDF.

2110--2170 MHz, 50 W AVG., 28 V

Output PAR

(dB)

ACPR

(dBc)

IRL

(dB)

Frequency

2110 MHz

2140 MHz

2170 MHz

(dB)

16.7

17.0

17.2

(%)

30.5

31.0

31.8

7.2

7.1

7.0

--35.7

--35.4

--34.8

-- 1 9

-- 2 0

-- 1 5

Features

•

Greater Negative Gate--Source Voltage Range for Improved Class C Operation

Designed for Digital Predistortion Error Correction Systems

Optimized for Doherty Applications

NI--780S--6: R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel.

NI--780S--2: R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.

For R5 Tape and Reel options, see p. 18.

N.C.

VBW

RF /V

in GS

RF /V

out DS

VBW

N.C.

NI--780S--6

AFT21S230S

(Top View)

Figure 1. Pin Connections

RF /V

in GS

out DS

NI--780S--2

AFT21S232S

(Top View)

Figure 2. Pin Connections

AFT21S230SR3 AFT21S232SR3

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...15

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