Datasheet > AFT21S240-12SR3

AFT21S240-12SR3

更新时间： 2024-10-27 01:18:19

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
14页	633K
描述
RF Power LDMOS Transistor

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AFT21S240-12SR3 数据手册

Document Number: AFT21S240--12S

Rev. 0, 4/2014

Freescale Semiconductor

Technical Data

RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFET

This 55 W RF power LDMOS transistor is designed for cellular base station

applications covering the frequency range of 2110 to 2170 MHz.

AFT21S240--12SR3



Typical Single--Carrier W--CDMA Characterization Performance:

V_DD= 28 Vdc, I_DQ= 1400 mA, P_out= 55 W Avg., Input Signal

PAR = 9.9 dB @ 0.01% Probability on CCDF.

2110–2170 MHz, 55 W AVG., 28 V

AIRFAST RF POWER LDMOS

TRANSISTOR



Output PAR

(dB)

ACPR

(dBc)

IRL

(dB)

Frequency

2110 MHz

2140 MHz

2170 MHz

(dB)

19.5

19.8

20.2

(%)

32.4

32.8

33.1

7.2

7.1

–34.4

–33.7

–33.1

–20

–19

–16

Features



Greater Negative Gate--Source Voltage Range for Improved Class C

Operation



Designed for Digital Predistortion Error Correction Systems

Optimized for Doherty Applications

In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13--inch Reel.

NI--880XS--2L2L

(1)

VBW

RF /V

in GS

RF /V

out DS

(1)

VBW

(Top View)

Figure 1. Pin Connections

1. Device cannot operate with the V current

supplied through pin 2 and pin 4.

AFT21S240--12SR3

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...14

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