Datasheet > AFT26HW050SR3

AFT26HW050SR3

更新时间： 2024-11-17 01:07:51

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
21页	760K
描述
RF Power LDMOS Transistors

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数据手册

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AFT26HW050SR3 数据手册

Document Number: AFT26HW050S

Rev. 2, 7/2013

Freescale Semiconductor

Technical Data

RF Power LDMOS Transistors

AFT26HW050SR3

AFT26HW050GSR3

AFT26H050W26SR3

N--Channel Enhancement--Mode Lateral MOSFETs

These 9 watt asymmetrical Doherty RF power LDMOS transistors are

designed for cellular base station applications requiring very wide instantaneous

bandwidth capability covering the frequency range of 2496 to 2690 MHz.



Typical Doherty Single--Carrier W--CDMA Performance: V_DD= 28 Volts,

_DQA= 100 mA, V_GSB= 1.4 Vdc, P_out= 9 Watts Avg., Input Signal

PAR = 9.9 dB @ 0.01% Probability on CCDF.

2496–2690 MHz, 9 W AVG., 28 V



Output PAR

(dB)

ACPR

(dBc)

Frequency

2620 MHz

2655 MHz

2690 MHz

(dB)

14.9

14.6

14.2

(%)

48.6

48.3

47.1

7.9

7.8

--28.4

--32.6

--37.3

NI--780S--4L4S

AFT26HW050SR3

Features



Advanced High Performance In--Package Doherty

Designed for Wide Instantaneous Bandwidth Applications



Greater Negative Gate--Source Voltage Range for Improved Class C

Operation



Designed for Digital Predistortion Error Correction Systems

In Tape and Reel. R3 Suffix = 250 Units, 44 mm Tape Width, 13--inch Reel.

NI--780GS--4L4L

AFT26HW050GSR3

NI--780S--4L4L

AFT26H050W26SR3

(1)

N.C.

RF /V

VBW

Carrier

RF /V

outA DSA

inA GSA

RF /V

inB GSB

outB DSB

Peaking

(1)

N.C.

VBW

(Top View)

Figure 1. Pin Connections

1. Device can operate with the V

current

supplied through pin 5 and pin 8.

AFT26HW050SR3 AFT26HW050GSR3 AFT26H050W26SR3

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...21

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