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AFT27S012NT1 PDF预览

AFT27S012NT1

更新时间: 2024-11-17 01:18:19
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
10页 403K
描述
RF Power LDMOS Transistor

AFT27S012NT1 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.66峰值回流温度(摄氏度):NOT SPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

AFT27S012NT1 数据手册

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Document Number: AFT27S012N  
Rev. 0, 07/2017  
NXP Semiconductors  
Technical Data  
RF Power LDMOS Transistor  
N--Channel Enhancement--Mode Lateral MOSFET  
AFT27S012NT1  
This 1.26 W RF power LDMOS transistor is designed for cellular base  
station applications covering the frequency range of 728 to 2700 MHz.  
Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc,  
IDQ = 90 mA, Pout = 1.26 W Avg., Input Signal PAR = 9.9 dB @ 0.01%  
Probability on CCDF.(1)  
728–2700 MHz, 1.26 W AVG., 28 V  
AIRFAST RF POWER LDMOS  
TRANSISTOR  
2100 MHz  
G
Output PAR  
(dB)  
ACPR  
(dBc)  
IRL  
(dB)  
ps  
D
Frequency  
2110 MHz  
2140 MHz  
2170 MHz  
2200 MHz  
(dB)  
20.8  
20.9  
20.9  
20.8  
(%)  
22.0  
22.6  
22.8  
22.9  
9.8  
9.6  
9.4  
9.3  
–41.1  
–40.7  
–40.8  
–40.4  
–9  
–10  
–10  
–9  
PLD--1.5W  
PLASTIC  
1. All data measured in fixture with device soldered to heatsink.  
Features  
Greater negative gate--source voltage range for improved Class C operation  
Designed for digital predistortion error correction systems  
Universal broadband driven device with internal RF feedback  
RF /V  
in GS  
RF /V  
out DS  
(Top View)  
Note: The center pad on the backside of the  
package is the source terminal for the  
transistor.  
Figure 1. Pin Connections  
2017 NXP B.V.  

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