Datasheet > AFT26P100-4WSR3

AFT26P100-4WSR3

更新时间： 2024-11-17 01:13:15

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
16页	603K
描述
RF Power LDMOS Transistors

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数据手册

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AFT26P100-4WSR3 数据手册

Document Number: AFT26P100--4WS

Rev. 2, 3/2015

Freescale Semiconductor

Technical Data

RF Power LDMOS Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

AFT26P100--4WSR3

AFT26P100--4WGSR3

These 22 watt symmetrical Doherty RF power LDMOS transistors are

designed for cellular base station applications requiring very wide instantaneous

bandwidth capability covering the frequency range of 2496 to 2690 MHz.



Typical Doherty Single--Carrier W--CDMA Characterization Performance:

_DD= 28 Volts, V_GSA= 0.4 Vdc, I_DQB= 344 mA, P_out= 22 Watts Avg.,

Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.⁽¹⁾

2496–2690 MHz, 22 W AVG., 28 V

AIRFAST RF POWER LDMOS

TRANSISTORS



Output PAR

(dB)

ACPR

(dBc)

IRL

(dB)

Frequency

2496 MHz

2590 MHz

2690 MHz

(dB)

15.5

16.1

15.3

(%)

44.4

43.5

43.9

8.0

7.8

7.4

--32.3

--34.9

--35.0

-- 1 5

-- 1 4

-- 1 3

NI--780S--4L

AFT26P100--4WSR3

Features



Designed for Wide Instantaneous Bandwidth Applications

Greater Negative Gate--Source Voltage Range for Improved Class C

Operation



Able to Withstand Extremely High Output VSWR and Broadband Operating

Conditions

In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13--inch Reel.

NI--780GS--4L

AFT26P100--4WGSR3

Peaking

RF /V

outA DSA

inA GSA

(2)

RF /V

inB GSB

RF /V

outB DSB

Carrier

(Top View)

Figure 1. Pin Connections

2. Pin connections 1 and 2 are DC coupled

and RF independent.

1. All characterization data measured in characterization fixture with device soldered to heatsink.

AFT26P100--4WSR3 AFT26P100--4WGSR3

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...16

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