Datasheet > AFT27S012N

AFT27S012N

更新时间： 2024-11-17 01:18:19

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
10页	403K
描述
RF Power LDMOS Transistor

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数据手册

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AFT27S012N 数据手册

Document Number: AFT27S012N

Rev. 0, 07/2017

NXP Semiconductors

Technical Data

RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFET

AFT27S012NT1

This 1.26 W RF power LDMOS transistor is designed for cellular base

station applications covering the frequency range of 728 to 2700 MHz.



Typical Single--Carrier W--CDMA Performance: V_DD= 28 Vdc,

I_DQ= 90 mA, P_out= 1.26 W Avg., Input Signal PAR = 9.9 dB @ 0.01%

Probability on CCDF.⁽¹⁾

728–2700 MHz, 1.26 W AVG., 28 V

AIRFAST RF POWER LDMOS

TRANSISTOR

2100 MHz



Output PAR

(dB)

ACPR

(dBc)

IRL

(dB)

Frequency

2110 MHz

2140 MHz

2170 MHz

2200 MHz

(dB)

20.8

20.9

20.8

(%)

22.0

22.6

22.8

22.9

9.8

9.6

9.4

9.3

–41.1

–40.7

–40.8

–40.4

–9

–10

–9

PLD--1.5W

PLASTIC

1. All data measured in fixture with device soldered to heatsink.

Features



Greater negative gate--source voltage range for improved Class C operation

Designed for digital predistortion error correction systems

Universal broadband driven device with internal RF feedback

RF /V

in GS

RF /V

out DS

(Top View)

Note: The center pad on the backside of the

package is the source terminal for the

transistor.

Figure 1. Pin Connections

 2017 NXP B.V.

AFT27S012NT1

RF Device Data

NXP Semiconductors

12 3 4 5 6 7...10

中文翻译

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