Datasheet > AFT26H160-4S4R3

AFT26H160-4S4R3

更新时间： 2024-09-30 01:18:19

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
16页	468K
描述
RF Power LDMOS Transistor

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数据手册
替代型号

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AFT26H160-4S4R3 数据手册

Document Number: AFT26H160--4S4

Rev. 1, 11/2013

Freescale Semiconductor

Technical Data

RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFET

This 32 W asymmetrical Doherty RF power LDMOS transistor is designed for

cellular base station applications covering the frequency range of 2496 to

2690 MHz.

AFT26H160--4S4R3



Typical Doherty Single--Carrier W--CDMA Performance: V_DD= 28 Vdc,

_DQA= 500 mA, V_GSB= 0.6 Vdc, P_out= 32 W Avg., Input Signal

PAR = 9.9 dB @ 0.01% Probability on CCDF.



Output PAR

(dB)

ACPR

(dBc)

2496--2690 MHz, 32 W AVG., 28 V

Frequency

2496 MHz

2570 MHz

2690 MHz

(dB)

14.9

15.4

15.1

(%)

45.7

45.6

44.5

8.0

7.9

7.8

--28.9

--30.8

--33.0

Features



Advanced High Performance In--Package Doherty

Greater Negative Gate--Source Voltage Range for Improved Class C

Operation



Designed for Digital Predistortion Error Correction Systems

In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13--inch Reel.

NI--880XS--4L4S

(1)

N.C.

RF /V

VBW

Carrier

RF /V

outA DSA

inA GSA

RF /V

outB DSB

inB GSB

Peaking

(1)

N.C.

VBW

(Top View)

Figure 1. Pin Connections

1. Device cannot operate with the V current

supplied through pin 5 and pin 8.

AFT26H160--4S4R3

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...16

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AFT26H160-4S4R3 替代型号

型号	品牌	替代类型	描述	数据表
MRF8S26120HR3	NXP	功能相似	Single W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2620-2690 MHz, 28 W Avg., 28 V
MRF8S26120HSR3	NXP	功能相似	Single W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2620-2690 MHz, 28 W Avg., 28 V

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