Datasheet > AFT26H200W03S

AFT26H200W03S

更新时间： 2024-11-17 01:18:19

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
16页	333K
描述
RF Power LDMOS Transistor

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数据手册

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AFT26H200W03S 数据手册

Document Number: AFT26H200W03S

Rev. 0, 8/2013

Freescale Semiconductor

Technical Data

RF Power LDMOS Transistor

N−Channel Enhancement−Mode Lateral MOSFET

This 45 watt asymmetrical Doherty RF power LDMOS transistor is designed

for cellular base station applications requiring very wide instantaneous

bandwidth capability covering the frequency range of 2496 to 2690 MHz.

AFT26H200W03SR6

• Typical Doherty Single−Carrier W−CDMA Performance: V_DD= 28 Volts,

_DQA= 500 mA, V_GSB= 0.3 Vdc, P_out= 45 Watts Avg., Input Signal

PAR = 9.9 dB @ 0.01% Probability on CCDF.

2496−2690 MHz, 45 W AVG., 28 V

AIRFAST RF POWER LDMOS

TRANSISTOR

Output PAR

(dB)

ACPR

(dBc)

Frequency

2496 MHz

2590 MHz

2690 MHz

(dB)

14.1

14.2

13.9

(%)

45.2

44.0

44.1

7.8

7.6

−31.1

−35.6

−37.5

Features

• Advanced High Performance In−Package Doherty

• Designed for Wide Instantaneous Bandwidth Applications

• Greater Negative Gate−Source Voltage Range for Improved Class C

Operation

NI−1230S−4S

• Designed for Digital Predistortion Error Correction Systems

• In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13−inch Reel.

Carrier

RF /V

inA GSA

outA DSA

(1)

RF /V

inB GSB

RF /V

outB DSB

Peaking

(Top View)

Figure 1. Pin Connections

1. Pin connections 1 and 2 are DC coupled

and RF independent.

AFT26H200W03SR6

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...16

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