Datasheet > AFT23H200-4S2L

AFT23H200-4S2L

更新时间： 2024-10-27 01:18:19

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
16页	413K
描述
RF Power LDMOS Transistor

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AFT23H200-4S2L 数据手册

Document Number: AFT23H200−4S2L

Rev. 1, 5/2013

Freescale Semiconductor

Technical Data

RF Power LDMOS Transistor

N−Channel Enhancement−Mode Lateral MOSFET

This 45 watt asymmetrical Doherty RF power LDMOS transistor is designed

for cellular base station applications covering the frequency range of

2300 to 2400 MHz.

AFT23H200−4S2LR6

• Typical Doherty Single−Carrier W−CDMA Performance: V_DD= 28 Volts,

_DQA= 500 mA, V_GSB= 0.5 Vdc, P_out= 45 Watts Avg., Input Signal

2300−2400 MHz, 45 W AVG., 28 V

PAR = 9.9 dB @ 0.01% Probability on CCDF.

Output PAR

(dB)

ACPR

(dBc)

Frequency

2300 MHz

2350 MHz

2400 MHz

(dB)

15.3

15.4

15.2

(%)

42.8

43.3

42.8

8.4

8.3

−27.6

−31.1

−33.9

Features

• Advanced High Performance In−Package Doherty

• Greater Negative Gate−Source Voltage Range for Improved Class C

Operation

NI−1230−4LS2L

• Designed for Digital Predistortion Error Correction Systems

• In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13−inch Reel.

(1)

VBW

Carrier

RF /V

outA DSA

inA GSA

RF /V

inB GSB

RF /V

outB DSB

Peaking

(1)

VBW

(Top View)

Figure 1. Pin Connections

1. Device cannot operate with the V current

supplied through pin 3 and pin 6.

AFT23H200−4S2LR6

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...16

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