Datasheet > AFT23S160W02S

AFT23S160W02S

更新时间： 2024-10-28 01:13:15

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
15页	280K
描述
RF Power LDMOS Transistors

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AFT23S160W02S 数据手册

Document Number: AFT23S160W02S

Rev. 0, 11/2013

Freescale Semiconductor

Technical Data

RF Power LDMOS Transistors

N−Channel Enhancement−Mode Lateral MOSFETs

AFT23S160W02SR3

AFT23S160W02GSR3

These 45 watt RF power LDMOS transistors are designed for cellular base

station applications requiring very wide instantaneous bandwidth capability

covering the frequency range of 2300 to 2400 MHz.

• Typical Single−Carrier W−CDMA Performance: V_DD= 28 Vdc,

_DQ= 1100 mA, P_out= 45 Watts Avg., Input Signal PAR = 9.9 dB @ 0.01%

2300−2400 MHz, 45 W AVG., 28 V

AIRFAST RF POWER LDMOS

TRANSISTORS

Probability on CCDF.

Output PAR

(dB)

ACPR

(dBc)

IRL

(dB)

Frequency

2300 MHz

2350 MHz

2400 MHz

(dB)

17.7

17.8

17.9

(%)

31.0

30.5

30.3

6.8

6.7

6.6

−34.6

−34.5

−33.9

−18

−25

−14

NI−780S−2L

AFT23S160W02SR3

Features

• Designed for Wide Instantaneous Bandwidth Applications

• Greater Negative Gate−Source Voltage Range for Improved Class C

Operation

• Able to Withstand Extremely High Output VSWR and Broadband Operating

Conditions

• Optimized for Doherty Applications

• In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13−inch Reel.

NI−780GS−2L

AFT23S160W02GSR3

RF /V

in GS

RF /V

out DS

(Top View)

Figure 1. Pin Connections

AFT23S160W02SR3 AFT23S160W02GSR3

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...15

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