Datasheet > AFT23H160-25S

AFT23H160-25S

更新时间： 2024-10-27 01:18:19

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
16页	482K
描述
RF Power LDMOS Transistor

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AFT23H160-25S 数据手册

Document Number: AFT23H160--25S

Rev. 0, 11/2015

Freescale Semiconductor

Technical Data

RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFET

AFT23H160--25SR3

This 32 W asymmetrical Doherty RF power LDMOS transistor is designed for

cellular base station applications covering the frequency range of 2300 to

2400 MHz.

2300–2400 MHz, 32 W AVG., 28 V

AIRFAST RF POWER LDMOS

TRANSISTOR

2300 MHz



Typical Doherty Single--Carrier W--CDMA Performance: V_DD= 28 Vdc,

I_DQA= 450 mA, V_GSB= 0.6 Vdc, P_out= 32 W Avg., Input Signal

PAR = 9.9 dB @ 0.01% Probability on CCDF.



Output PAR

(dB)

ACPR

(dBc)

Frequency

2300 MHz

2350 MHz

2400 MHz

(dB)

16.7

16.9

16.8

(%)

46.6

46.4

46.3

8.0

7.7

7.6

–31.7

–32.8

–34.1

Features



Advanced High Performance In--Package Doherty

Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

NI--880XS--4L4S



Designed for Digital Predistortion Error Correction Systems

(1)

N.C.

RF /V

VBW

Carrier

RF /V

outA DSA

inA GSA

RF /V

outB DSB

inB GSB

Peaking

(1)

N.C.

VBW

(Top View)

Figure 1. Pin Connections

1. Device cannot operate with V current

supplied through pin 5 and pin 8.

AFT23H160--25SR3

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...16

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