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AFT21S240-12S PDF预览

AFT21S240-12S

更新时间: 2024-10-27 01:18:19
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
14页 633K
描述
RF Power LDMOS Transistor

AFT21S240-12S 数据手册

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Document Number: AFT21S240--12S  
Rev. 0, 4/2014  
Freescale Semiconductor  
Technical Data  
RF Power LDMOS Transistor  
N--Channel Enhancement--Mode Lateral MOSFET  
This 55 W RF power LDMOS transistor is designed for cellular base station  
applications covering the frequency range of 2110 to 2170 MHz.  
AFT21S240--12SR3  
Typical Single--Carrier W--CDMA Characterization Performance:  
VDD = 28 Vdc, IDQ = 1400 mA, Pout = 55 W Avg., Input Signal  
PAR = 9.9 dB @ 0.01% Probability on CCDF.  
2110–2170 MHz, 55 W AVG., 28 V  
AIRFAST RF POWER LDMOS  
TRANSISTOR  
G
Output PAR  
(dB)  
ACPR  
(dBc)  
IRL  
(dB)  
ps  
D
Frequency  
2110 MHz  
2140 MHz  
2170 MHz  
(dB)  
19.5  
19.8  
20.2  
(%)  
32.4  
32.8  
33.1  
7.2  
7.2  
7.1  
–34.4  
–33.7  
–33.1  
–20  
–19  
–16  
Features  
Greater Negative Gate--Source Voltage Range for Improved Class C  
Operation  
Designed for Digital Predistortion Error Correction Systems  
Optimized for Doherty Applications  
In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13--inch Reel.  
NI--880XS--2L2L  
(1)  
4
3
VBW  
RF /V  
in GS  
1
RF /V  
out DS  
(1)  
VBW  
2
(Top View)  
Figure 1. Pin Connections  
1. Device cannot operate with the V current  
DD  
supplied through pin 2 and pin 4.  
Freescale Semiconductor, Inc., 2014. All rights reserved.  

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