5秒后页面跳转
74AUP2G02GM PDF预览

74AUP2G02GM

更新时间: 2024-11-17 06:31:51
品牌 Logo 应用领域
恩智浦 - NXP 栅极触发器逻辑集成电路
页数 文件大小 规格书
17页 93K
描述
Low-power dual 2-input NOR gate

74AUP2G02GM 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:QFN包装说明:1.60 X 1.60 MM, 0.50 MM HEIGHT, PLASTIC, MO-255, SOT902-1, QFN-8
针数:8Reach Compliance Code:compliant
HTS代码:8542.39.00.01风险等级:5.44
系列:AUP/ULP/VJESD-30 代码:S-PQCC-N8
长度:1.6 mm负载电容(CL):30 pF
逻辑集成电路类型:NOR GATE最大I(ol):0.0017 A
湿度敏感等级:1功能数量:2
输入次数:2端子数量:8
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:VQCCN
封装等效代码:LCC8,.06SQ,20封装形状:SQUARE
封装形式:CHIP CARRIER, VERY THIN PROFILE包装方法:TAPE AND REEL
峰值回流温度(摄氏度):260电源:1.2/3.3 V
Prop。Delay @ Nom-Sup:24.7 ns传播延迟(tpd):24.7 ns
认证状态:Not Qualified施密特触发器:NO
座面最大高度:0.5 mm子类别:Gates
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):0.8 V
标称供电电压 (Vsup):1.1 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子形式:NO LEAD端子节距:0.5 mm
端子位置:QUAD处于峰值回流温度下的最长时间:30
宽度:1.6 mmBase Number Matches:1

74AUP2G02GM 数据手册

 浏览型号74AUP2G02GM的Datasheet PDF文件第2页浏览型号74AUP2G02GM的Datasheet PDF文件第3页浏览型号74AUP2G02GM的Datasheet PDF文件第4页浏览型号74AUP2G02GM的Datasheet PDF文件第5页浏览型号74AUP2G02GM的Datasheet PDF文件第6页浏览型号74AUP2G02GM的Datasheet PDF文件第7页 
74AUP2G02  
Low-power dual 2-input NOR gate  
Rev. 03 — 11 December 2008  
Product data sheet  
1. General description  
The 74AUP2G02 provides a dual 2-input NOR function.  
Schmitt-trigger action at all inputs makes the circuit tolerant to slower input rise and fall  
times across the entire VCC range from 0.8 V to 3.6 V.  
This device ensures a very low static and dynamic power consumption across the entire  
VCC range from 0.8 V to 3.6 V.  
This device is fully specified for partial power-down applications using IOFF. The IOFF  
circuitry disables the output, preventing a damaging backflow current through the device  
when it is powered down.  
2. Features  
I Wide supply voltage range from 0.8 V to 3.6 V  
I High noise immunity  
I Complies with JEDEC standards:  
N JESD8-12 (0.8 V to 1.3 V)  
N JESD8-11 (0.9 V to 1.65 V)  
N JESD8-7 (1.2 V to 1.95 V)  
N JESD8-5 (1.8 V to 2.7 V)  
N JESD8-B (2.7 V to 3.6 V)  
I ESD protection:  
N HBM JESD22-A114E Class 3A exceeds 5000 V  
N MM JESD22-A115-A exceeds 200 V  
N CDM JESD22-C101C exceeds 1000 V  
I Low static power consumption; ICC = 0.9 µA (maximum)  
I Latch-up performance exceeds 100 mA per JESD78 Class II  
I Inputs accept voltages up to 3.6 V  
I Low noise overshoot and undershoot < 10 % of VCC  
I IOFF circuitry provides partial Power-down mode operation  
I Multiple package options  
I Specified from 40 °C to +85 °C and 40 °C to +125 °C  

74AUP2G02GM 替代型号

型号 品牌 替代类型 描述 数据表
NC7NZ34L8X ONSEMI

类似代替

TinyLogic UHS 三缓冲器
NC7NZ17L8X ONSEMI

类似代替

带施密特触发器输入的TinyLogic UHS三通道缓冲器

与74AUP2G02GM相关器件

型号 品牌 获取价格 描述 数据表
74AUP2G02GM,125 NXP

获取价格

74AUP2G02 - Low-power dual 2-input NOR gate QFN 8-Pin
74AUP2G02GN NEXPERIA

获取价格

Low-power dual 2-input NOR gateProduction
74AUP2G02GS NEXPERIA

获取价格

Low-power dual 2-input NOR gateProduction
74AUP2G02GT NXP

获取价格

Low-power dual 2-input NOR gate
74AUP2G02GT NEXPERIA

获取价格

Low-power dual 2-input NOR gateProduction
74AUP2G04 NXP

获取价格

Low-power dual inverter
74AUP2G04 DIODES

获取价格

DUAL INVERTERS
74AUP2G04DW-7 DIODES

获取价格

Inverter, AUP/ULP/V Series, 2-Func, 1-Input, CMOS, PDSO6, 2 X 2 MM, 1.10 MM HEIGHT, 0.65 M
74AUP2G04FW3-7 DIODES

获取价格

DUAL INVERTERS
74AUP2G04FW4-7 DIODES

获取价格

DUAL INVERTERS