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74AUP2G02GM,125 PDF预览

74AUP2G02GM,125

更新时间: 2024-01-16 19:51:28
品牌 Logo 应用领域
恩智浦 - NXP 逻辑集成电路触发器
页数 文件大小 规格书
17页 83K
描述
74AUP2G02 - Low-power dual 2-input NOR gate QFN 8-Pin

74AUP2G02GM,125 技术参数

生命周期:Active零件包装代码:QFN
包装说明:VQCCN,针数:8
Reach Compliance Code:compliantHTS代码:8542.39.00.01
Factory Lead Time:13 weeks风险等级:1.44
Samacsys Description:74AUP2G02 - Low-power dual 2-input NOR gate@en-us系列:AUP/ULP/V
JESD-30 代码:S-PQCC-N8JESD-609代码:e4
长度:1.6 mm逻辑集成电路类型:NOR GATE
湿度敏感等级:1功能数量:1
输入次数:2端子数量:8
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:VQCCN
封装形状:SQUARE封装形式:CHIP CARRIER, VERY THIN PROFILE
峰值回流温度(摄氏度):260传播延迟(tpd):24.7 ns
座面最大高度:0.5 mm最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):0.8 V标称供电电压 (Vsup):1.1 V
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:NO LEAD端子节距:0.5 mm
端子位置:QUAD处于峰值回流温度下的最长时间:30
宽度:1.6 mm

74AUP2G02GM,125 数据手册

 浏览型号74AUP2G02GM,125的Datasheet PDF文件第2页浏览型号74AUP2G02GM,125的Datasheet PDF文件第3页浏览型号74AUP2G02GM,125的Datasheet PDF文件第4页浏览型号74AUP2G02GM,125的Datasheet PDF文件第5页浏览型号74AUP2G02GM,125的Datasheet PDF文件第6页浏览型号74AUP2G02GM,125的Datasheet PDF文件第7页 
74AUP2G02  
Low-power dual 2-input NOR gate  
Rev. 03 — 11 December 2008  
Product data sheet  
1. General description  
The 74AUP2G02 provides a dual 2-input NOR function.  
Schmitt-trigger action at all inputs makes the circuit tolerant to slower input rise and fall  
times across the entire VCC range from 0.8 V to 3.6 V.  
This device ensures a very low static and dynamic power consumption across the entire  
VCC range from 0.8 V to 3.6 V.  
This device is fully specified for partial power-down applications using IOFF. The IOFF  
circuitry disables the output, preventing a damaging backflow current through the device  
when it is powered down.  
2. Features  
I Wide supply voltage range from 0.8 V to 3.6 V  
I High noise immunity  
I Complies with JEDEC standards:  
N JESD8-12 (0.8 V to 1.3 V)  
N JESD8-11 (0.9 V to 1.65 V)  
N JESD8-7 (1.2 V to 1.95 V)  
N JESD8-5 (1.8 V to 2.7 V)  
N JESD8-B (2.7 V to 3.6 V)  
I ESD protection:  
N HBM JESD22-A114E Class 3A exceeds 5000 V  
N MM JESD22-A115-A exceeds 200 V  
N CDM JESD22-C101C exceeds 1000 V  
I Low static power consumption; ICC = 0.9 µA (maximum)  
I Latch-up performance exceeds 100 mA per JESD78 Class II  
I Inputs accept voltages up to 3.6 V  
I Low noise overshoot and undershoot < 10 % of VCC  
I IOFF circuitry provides partial Power-down mode operation  
I Multiple package options  
I Specified from 40 °C to +85 °C and 40 °C to +125 °C  
 
 

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