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74AUP2G04GM,132 PDF预览

74AUP2G04GM,132

更新时间: 2024-11-20 14:47:03
品牌 Logo 应用领域
恩智浦 - NXP 光电二极管逻辑集成电路触发器
页数 文件大小 规格书
19页 196K
描述
74AUP2G04 - Low-power dual inverter SON 6-Pin

74AUP2G04GM,132 技术参数

是否Rohs认证:符合生命周期:Transferred
零件包装代码:SON包装说明:1 X 1.45 MM, 0.50 MM HEIGHT, PLASTIC, MO-252, SOT-886, XSON-6
针数:6Reach Compliance Code:compliant
HTS代码:8542.39.00.01风险等级:5.49
Is Samacsys:N系列:AUP/ULP/V
JESD-30 代码:R-PDSO-N6JESD-609代码:e3
长度:1.45 mm负载电容(CL):30 pF
逻辑集成电路类型:INVERTER最大I(ol):0.0017 A
湿度敏感等级:1功能数量:2
输入次数:1端子数量:6
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:VSON
封装等效代码:SOLCC6,.04,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, VERY THIN PROFILE包装方法:TAPE AND REEL
峰值回流温度(摄氏度):260电源:1.2/3.3 V
Prop。Delay @ Nom-Sup:20.9 ns传播延迟(tpd):20.9 ns
认证状态:Not Qualified施密特触发器:NO
座面最大高度:0.5 mm子类别:Gates
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):0.8 V
标称供电电压 (Vsup):1.1 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子面层:Tin (Sn)端子形式:NO LEAD
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30宽度:1 mm
Base Number Matches:1

74AUP2G04GM,132 数据手册

 浏览型号74AUP2G04GM,132的Datasheet PDF文件第2页浏览型号74AUP2G04GM,132的Datasheet PDF文件第3页浏览型号74AUP2G04GM,132的Datasheet PDF文件第4页浏览型号74AUP2G04GM,132的Datasheet PDF文件第5页浏览型号74AUP2G04GM,132的Datasheet PDF文件第6页浏览型号74AUP2G04GM,132的Datasheet PDF文件第7页 
74AUP2G04  
Low-power dual inverter  
Rev. 5 — 5 March 2012  
Product data sheet  
1. General description  
The 74AUP2G04 provides two inverting buffers.  
Schmitt trigger action at all inputs makes the circuit tolerant of slower input rise and fall  
times across the entire VCC range from 0.8 V to 3.6 V.  
This device ensures a very low static and dynamic power consumption across the entire  
VCC range from 0.8 V to 3.6 V.  
This device is fully specified for partial power-down applications using IOFF. The IOFF  
circuitry disables the output, preventing the damaging backflow current through the device  
when it is powered down.  
2. Features and benefits  
Wide supply voltage range from 0.8 V to 3.6 V  
High noise immunity  
Complies with JEDEC standards:  
JESD8-12 (0.8 V to 1.3 V)  
JESD8-11 (0.9 V to 1.65 V)  
JESD8-7 (1.2 V to 1.95 V)  
JESD8-5 (1.8 V to 2.7 V)  
JESD8-B (2.7 V to 3.6 V)  
ESD protection:  
HBM JESD22-A114F Class 3A exceeds 5000 V  
MM JESD22-A115-A exceeds 200 V  
CDM JESD22-C101E exceeds 1000 V  
Low static power consumption; ICC = 0.9 A (maximum)  
Latch-up performance exceeds 100 mA per JESD 78 Class II  
Inputs accept voltages up to 3.6 V  
Low noise overshoot and undershoot < 10 % of VCC  
IOFF circuitry provides partial power-down mode operation  
Multiple package options  
Specified from 40 C to +85 C and 40 C to +125 C  
 
 

74AUP2G04GM,132 替代型号

型号 品牌 替代类型 描述 数据表
74AUP2G04GM,115 NXP

完全替代

74AUP2G04 - Low-power dual inverter SON 6-Pin
74AUP2G04GF,132 NXP

完全替代

74AUP2G04 - Low-power dual inverter SON 6-Pin

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