Datasheet > 3SK223-U90-A

3SK223-U90-A

更新时间： 2024-11-08 03:27:03

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
6页	51K
描述
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, MINIMOLD PACKAGE-4

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3SK223-U90-A 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

3SK223

RF AMPLIFIER FOR CATV TUNER

N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR

4 PINS MINI MOLD

FEATURES

PACKAGE DIMENSIONS

•

The Characteristic of Cross-Modulation is good.

(Unit: mm)

CM = 101 dBµ TYP. @ f = 470 MHz, GR = –30 dB

+0.2

2.8

–0.3

•

Low Noise Figure:

NF1 = 2.2 dB TYP. (f = 470 MHz)

+0.2

–0.3

1.5

NF2 = 0.9 dB TYP. (f = 55 MHz)

G^PS= 20 dB TYP. (f = 470 MHz)

•

High Power Gain:

Enhancement Type.

Suitable for use as RF amplifier in CATV tuner.

Automatically Mounting:

Small Package:

Embossed Type Taping

4 Pins Mini Mold

5°

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

Drain to Source Voltage

Gate1 to Source Voltage

Gate2 to Source Voltage

Gate1 to Drain Voltage

Gate2 to Drain Voltage

Drain Current

VDSX

V^G1S

VG2S

V^G1D

V^G2D

±8 (±10)^*1

°C

Total Power Dissipation

Channel Temperature

Storage Temperature

*1 R^L≥ 10 kΩ

P^D

200

1. Source

2. Drain

T^ch

125

Tstg

–55 to +125

3. Gate 2

4. Gate 1

PRECAUTION

Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltage

or fields.

Document No. P10575EJ2V0DS00 (2nd edition)

(Previous No. TD-2268)

Date Published August 1995 P

Printed in Japan

1989

1993

12 3 4 5 6

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