生命周期: | Obsolete | 包装说明: | MINIMOLD PACKAGE-4 |
Reach Compliance Code: | unknown | 风险等级: | 5.65 |
外壳连接: | SOURCE | 配置: | SINGLE |
最大漏极电流 (ID): | 0.025 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss): | 0.03 pF | 最高频带: | ULTRA HIGH FREQUENCY BAND |
JESD-30 代码: | R-PDSO-G4 | 元件数量: | 1 |
端子数量: | 4 | 工作模式: | DUAL GATE, DEPLETION MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
最小功率增益 (Gp): | 17 dB | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
3SK223-UIA-A | NEC |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- | |
3SK223-UIO | RENESAS |
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UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, MINIMOLD PACKAGE-4 | |
3SK223-UIO-A | NEC |
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RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- | |
3SK224 | NEC |
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RF AMPLIFIER FOR UHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MI | |
3SK224-A | NEC |
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暂无描述 | |
3SK224-U94 | NEC |
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RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- | |
3SK224-U95 | NEC |
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RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- | |
3SK224-UID | NEC |
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RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- | |
3SK224-UIE | NEC |
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RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- | |
3SK224-UIE-A | NEC |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- |