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3SK223-UIA PDF预览

3SK223-UIA

更新时间: 2024-11-07 13:00:39
品牌 Logo 应用领域
日电电子 - NEC 晶体射频放大器小信号场效应晶体管射频小信号场效应晶体管电视有线电视光电二极管
页数 文件大小 规格书
6页 59K
描述
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, MINIMOLD PACKAGE-4

3SK223-UIA 技术参数

生命周期:Obsolete包装说明:MINIMOLD PACKAGE-4
Reach Compliance Code:unknown风险等级:5.65
外壳连接:SOURCE配置:SINGLE
最大漏极电流 (ID):0.025 AFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):0.03 pF最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:R-PDSO-G4元件数量:1
端子数量:4工作模式:DUAL GATE, DEPLETION MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
最小功率增益 (Gp):17 dB认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

3SK223-UIA 数据手册

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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
3SK223  
RF AMPLIFIER FOR CATV TUNER  
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR  
4 PINS MINI MOLD  
FEATURES  
PACKAGE DIMENSIONS  
The Characteristic of Cross-Modulation is good.  
(Unit: mm)  
CM = 101 dBµ TYP. @ f = 470 MHz, GR = –30 dB  
+0.2  
2.8  
–0.3  
Low Noise Figure:  
NF1 = 2.2 dB TYP. (f = 470 MHz)  
+0.2  
–0.3  
1.5  
NF2 = 0.9 dB TYP. (f = 55 MHz)  
GPS = 20 dB TYP. (f = 470 MHz)  
High Power Gain:  
Enhancement Type.  
Suitable for use as RF amplifier in CATV tuner.  
Automatically Mounting:  
Small Package:  
Embossed Type Taping  
4 Pins Mini Mold  
5°  
5°  
5°  
5°  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)  
Drain to Source Voltage  
Gate1 to Source Voltage  
Gate2 to Source Voltage  
Gate1 to Drain Voltage  
Gate2 to Drain Voltage  
Drain Current  
VDSX  
VG1S  
VG2S  
VG1D  
VG2D  
ID  
18  
±8 (±10)*1  
±8 (±10)*1  
18  
V
V
V
V
18  
V
25  
mA  
mW  
°C  
°C  
Total Power Dissipation  
Channel Temperature  
Storage Temperature  
*1 RL 10 kΩ  
PD  
200  
1. Source  
2. Drain  
Tch  
125  
Tstg  
–55 to +125  
3. Gate 2  
4. Gate 1  
PRECAUTION  
Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltage  
or fields.  
Document No. P10575EJ2V0DS00 (2nd edition)  
(Previous No. TD-2268)  
Date Published August 1995 P  
Printed in Japan  
1989  
©

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