Datasheet > 3SK223-UIA-A

3SK223-UIA-A

更新时间： 2024-09-18 08:14:47

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
6页	51K
描述
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, MINIMOLD PACKAGE-4

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

3SK223-UIA-A 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

3SK223

RF AMPLIFIER FOR CATV TUNER

N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR

4 PINS MINI MOLD

FEATURES

PACKAGE DIMENSIONS

•

The Characteristic of Cross-Modulation is good.

(Unit: mm)

CM = 101 dBµ TYP. @ f = 470 MHz, GR = –30 dB

+0.2

2.8

–0.3

•

Low Noise Figure:

NF1 = 2.2 dB TYP. (f = 470 MHz)

+0.2

–0.3

1.5

NF2 = 0.9 dB TYP. (f = 55 MHz)

G^PS= 20 dB TYP. (f = 470 MHz)

•

High Power Gain:

Enhancement Type.

Suitable for use as RF amplifier in CATV tuner.

Automatically Mounting:

Small Package:

Embossed Type Taping

4 Pins Mini Mold

5°

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

Drain to Source Voltage

Gate1 to Source Voltage

Gate2 to Source Voltage

Gate1 to Drain Voltage

Gate2 to Drain Voltage

Drain Current

VDSX

V^G1S

VG2S

V^G1D

V^G2D

±8 (±10)^*1

°C

Total Power Dissipation

Channel Temperature

Storage Temperature

*1 R^L≥ 10 kΩ

P^D

200

1. Source

2. Drain

T^ch

125

Tstg

–55 to +125

3. Gate 2

4. Gate 1

PRECAUTION

Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltage

or fields.

Document No. P10575EJ2V0DS00 (2nd edition)

(Previous No. TD-2268)

Date Published August 1995 P

Printed in Japan

1989

1993

12 3 4 5 6

中文翻译

下载PDF

与3SK223-UIA-A相关器件

型号	品牌	获取价格	描述	数据表
3SK223-UIO	RENESAS	获取价格	UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, MINIMOLD PACKAGE-4
3SK223-UIO-A	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-
3SK224	NEC	获取价格	RF AMPLIFIER FOR UHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MI
3SK224-A	NEC	获取价格	暂无描述
3SK224-U94	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-
3SK224-U95	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-
3SK224-UID	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-
3SK224-UIE	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-
3SK224-UIE-A	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-
3SK225	TOSHIBA	获取价格	N CHANNEL DUAL GATE MOS TYPE (TV, FM TUNER VHF RF, UHF RF AMPLIFIER APPLIATIONS)