2SK4014
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSIV)
2SK4014
DC-DC Converter, Relay Drive and Motor Drive
Applications
Unit: mm
z Low drain-source ON-resistance
z High forward transfer admittance
: R
= 1.6 Ω (typ.)
DS (ON)
: |Y | = 5.0 S (typ.)
fs
z Low leakage current
z Enhancement mode
: I
= 100 µA (max) (V
= 720 V)
DSS
DS
: V = 2.0 to 4.0 V (V
= 10 V, I = 1 mA)
D
th
DS
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Drain-source voltage
Symbol
Rating
Unit
V
900
900
±30
6
V
V
DSS
Drain-gate voltage (R
Gate-source voltage
= 20 kΩ)
V
GS
DGR
V
V
GSS
DC (Note 1)
Pulse (Note 1)
I
A
D
1: Gate
2: Drain
3: Source
Drain current
I
18
A
DP
Drain power dissipation (Tc = 25°C)
P
45
W
D
AS
AR
Single-pulse avalanche energy
JEDEC
JEITA
―
E
972
mJ
(Note 2)
SC-67
2-10U1B
Weight: 1.7 g (typ.)
Avalanche current
I
6
4.5
A
TOSHIBA
Repetitive avalanche energy (Note 3)
Channel temperature
E
mJ
°C
°C
AR
T
ch
150
Storage temperature range
T
−55 to 150
stg
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
2
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
R
2.78
62.5
°C / W
°C / W
th (ch−c)
R
th (ch−a)
1
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: = 90 V, T = 25°C (initial), L = 49.5 mH, R = 25 Ω, I
V
DD
= 6 A
AR
ch
G
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
3
1
2010-01-29