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2SK4017_09 PDF预览

2SK4017_09

更新时间: 2024-09-14 12:49:59
品牌 Logo 应用领域
东芝 - TOSHIBA 转换器稳压器电机驱动DC-DC转换器
页数 文件大小 规格书
6页 209K
描述
Chopper Regulator, DC-DC Converter and Motor Drive Applications

2SK4017_09 数据手册

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2SK4017  
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS III)  
2SK4017  
Chopper Regulator, DC-DC Converter and Motor Drive  
Applications  
Unit: mm  
6.5 ± 0.2  
5.2 ± 0.2  
0.6 MAX.  
z 4-V gate drive  
z Low drainsource ON-resistance: R  
= 0.07 Ω (typ.)  
DS (ON)  
z High forward transfer admittance: |Y | = 6.0 S (typ.)  
fs  
z Low leakage current: I  
= 100 μA (max) (V  
= 60 V)  
DSS  
DS  
1.1 ± 0.2  
0.9  
z Enhancement mode: V = 1.3 to 2.5 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
0.6 MAX.  
Absolute Maximum Ratings (Ta = 25°C)  
2.3 2.3  
Characteristic  
Drainsource voltage  
Symbol  
Rating  
Unit  
1
2
3
V
60  
60  
±20  
5
V
V
DSS  
0.8 MAX.  
Draingate voltage (R  
Gatesource voltage  
= 20 kΩ)  
V
0.6 ± 0.15  
0.6 ± 0.15  
GS  
DGR  
1.1 MAX.  
V
V
GSS  
DC (Note 1)  
I
A
2
D
1. GATE  
2. DRAIN  
HEAT SINK)  
Drain current  
1
Pulse (Note 1)  
I
20  
20  
A
DP  
3. SOURSE  
3
Drain power dissipation (Tc = 25°C)  
Single-pulse avalanche energy  
P
W
D
AS  
AR  
E
40.5  
mJ  
(Note 2)  
JEDEC  
Avalanche current  
I
5
2
A
JEITA  
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
TOSHIBA  
2-7J2B  
T
ch  
150  
Weight: 0.36 g (typ.)  
Storage temperature range  
T
55 to 150  
stg  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability  
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.  
reliability test report and estimated failure rate, etc).  
Thermal Characteristics  
Characteristic  
Symbol  
Max  
Unit  
Thermal resistance, channel to case  
Thermal resistance, channel to ambient  
R
6.25  
125  
°C / W  
°C / W  
th (chc)  
R
th (cha)  
Note 1: Ensure that the channel temperature does not exceed 150°C.  
Note 2: V = 25 V, T = 25°C (initial), L = 2.2 mH, R = 25 Ω, I = 5 A  
DD  
ch  
G
AR  
Note 3: Repetitive rating: pulse width limited by maximum channel temperature  
This transistor is an electrostatic-sensitive device. Handle with care.  
1
2009-09-29  

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